AP9435GP Advanced Power Electronics Corp., AP9435GP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9435GP

Manufacturer Part Number
AP9435GP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9435GP

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
50
Rds(on) / Max(m?) Vgs@4.5v
90
Qg (nc)
8
Qgs (nc)
1.6
Qgd (nc)
4.3
Id(a)
-15
Pd(w)
12.5
Configuration
Single P
Package
TO-220
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
The TO-220 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
12.5
- 30
+20
S
-15
-60
DS(ON)
-8
DSS
Value
10
62
AP9435GP
TO-220(P)
50mΩ
200902252
- 15A
-30V
Units
Units
℃/W
℃/W
W
V
V
A
A
A
1

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AP9435GP Summary of contents

Page 1

... J Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter AP9435GP RoHS-compliant Product BV -30V DSS R 50mΩ DS(ON 15A D G TO-220( Rating Units ...

Page 2

... AP9435GP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =-10A D V =-10V 1.8 G 1.6 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature = 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9435GP o C -10V -8.0V -6.0V -4.5V V =-4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o T ...

Page 4

... AP9435GP 14 I =-10A =-24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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