AP0803GMP-HF Advanced Power Electronics Corp., AP0803GMP-HF Datasheet
AP0803GMP-HF
Specifications of AP0803GMP-HF
Related parts for AP0803GMP-HF
AP0803GMP-HF Summary of contents
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... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET ® 5x6. Parameter Parameter 3 AP0803GMP-HF Halogen-Free Product BV 30V DSS R 9.5mΩ DS(ON) I 44A □ ...
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... AP0803GMP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... V Fig 2. Typical Output Characteristics 2.0 I =20A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =250uA D 1.2 0.8 0.4 0.0 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP0803GMP-HF 10V C 7.0V 6.0V 5.0V V =4.0V G 2.0 3.0 4.0 5.0 6.0 , Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...
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... AP0803GMP- =20A D V =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 80 V =5V ...