AP4433GM-HF Advanced Power Electronics Corp., AP4433GM-HF Datasheet
AP4433GM-HF
Specifications of AP4433GM-HF
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AP4433GM-HF Summary of contents
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... Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter 10V 10V GS 1 Parameter 3 AP4433GM-HF Halogen-Free Product BV -30V DSS R 30mΩ DS(ON) I -7. Rating -30 +20 -7.4 -6 -30 2.5 ...
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... AP4433GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... -10V G 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature -250uA D 1.6 1 0.8 0.4 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4433GM Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...
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... AP4433GM- - -15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area 10 limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - ...