AP4532GM-HF Advanced Power Electronics Corp., AP4532GM-HF Datasheet
AP4532GM-HF
Specifications of AP4532GM-HF
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AP4532GM-HF Summary of contents
Page 1
... Symbol Rthj-amb Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 N-channel Parameter 3 AP4532GM-HF Halogen-Free Product N-CH BV 30V DSS R 50mΩ DS(ON P-CH BV -30V DSS R 70mΩ DS(ON ...
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... AP4532GM-HF N-CH Electrical Characteristics@T Symbol BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... D V =-10V DS V =-10V =-10V =6Ω, =10Ω = =-25V DS f=1.0MHz Test Conditions =25℃ AP4532GM-HF Min. Typ. Max. Units =250uA -30 - =-1mA - -0.028 =-250uA - =- = = = 18 ...
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... AP4532GM-HF N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics (V) GS Fig 3. On-Resistance v.s. Gate Voltage 10V 40 8.0V 30 6. =3. Fig 2. Typical Output Characteristics 1 ...
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... Fig 7. Maximum Safe Operating Area 100 125 150 0.1 1ms 10ms 100ms 0.01 1s 10s DC 0.001 0.0001 10 100 Fig 8. Effective Transient Thermal Impedance AP4532GM-HF 50 100 Ambient Temperature ( C) A Fig 6. Typical Power Dissipation Duty Factor = 0.5 0.2 0.1 0.05 0.02 0. Single Pulse Duty Factor = t/T Peak =135 thja ...
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... AP4532GM-HF N-Channel =10V Total Gate Charge (nC) G Fig 9. Gate Charge Characteristics 100 =150 0.1 0.01 0.1 0.3 0.5 0.7 0.9 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 1000 100 Fig 10. Typical Capacitance Characteristics ...
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... Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.33x RATED Fig 14. Switching Time Waveform THE OSCILLOSCOPE 10V 0.33 x RATED V DS Fig 16. Gate Charge Waveform AP4532GM- d(off) d(on Charge ...
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... AP4532GM-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics (V) GS Fig 3. On-Resistance v.s. Gate Voltage -10V o C -8.0V -6.0V V =-4. =-4.0A D ℃ =150 ...
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... C A Single Pluse 0.01 0 Fig 7. Maximum Safe Operating Area 100 125 150 o C) 1ms 10ms 100ms 1s 10s DC 0.001 10 100 (V) Fig 8. Effective Transient Thermal Impedance AP4532GM-HF 3 2.5 2 1 Ambient Temperature ( A Fig 6. Typical Power Dissipation 1 Duty Factor = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.0001 0.001 ...
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... AP4532GM-HF P-Channel =-10V Total Gate Charge (nC) G Fig 9. Gate Charge Characteristics 100 =150 0.1 0.01 0.1 0.3 0.5 0.7 -V (V) SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 = 0.9 1.1 1.3 1.5 100 ...
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... -1~-3mA I G Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.33 x RATED THE OSCILLOSCOPE -10V 0.33 x RATED AP4532GM- d(on) r Fig 14. Switching Time Waveform Charge Fig 16. Gate Charge Waveform t d(off ...