AP4419GH Advanced Power Electronics Corp., AP4419GH Datasheet

The TO-252 package is universally preferred for all commercial-industrial  surface mount applications and suited for low voltage applications such as DC/DC converters

AP4419GH

Manufacturer Part Number
AP4419GH
Description
The TO-252 package is universally preferred for all commercial-industrial  surface mount applications and suited for low voltage applications such as DC/DC converters
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4419GH

Vds
-35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
38
Rds(on) / Max(m?) Vgs@4.5v
68
Qg (nc)
12
Qgs (nc)
3
Qgd (nc)
8
Id(a)
-25
Pd(w)
34.7
Configuration
Single P
Package
TO-252
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4419GJ) is available for low-profile applications.
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
34.7
0.28
±20
-35
-25
-16
-70
DS(ON)
DSS
Value
3.6
110
G
AP4419GH/J
G D
D
S
S
TO-252(H)
TO-251(J)
200428051-1/4
38mΩ
-35V
-25A
Units
W/℃
Units
℃/W
℃/W
W
V
V
A
A
A

Related parts for AP4419GH

AP4419GH Summary of contents

Page 1

... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP4419GH/J Pb Free Plating Product BV -35V DSS R 38mΩ DS(ON) I -25A TO-252( TO-251(J) S ...

Page 2

... AP4419GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1.7 I =-16A = - =25 ℃ V =-10V G C 1.4 1.1 0.8 0.5 10 -50 Fig 4. Normalized On-Resistance 1 0.8 0.4 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP4419GH/J -10V o -7.0V C -5.0V -4. -3 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ...

Page 4

... AP4419GH =-30V DS I =-16A Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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