AP4417GH Advanced Power Electronics Corp., AP4417GH Datasheet

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... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP4417GH/J RoHS-compliant Product BV -35V DSS R 75mΩ DS(ON) I -15A TO-252( ...

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... AP4417GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... Fig 2. Typical Output Characteristics 1.8 I =-10A D V =-10V G 1.5 1.2 0.9 0.6 10 -50 Fig 4. Normalized On-Resistance 1.6 1.2 o =25 C 0.8 0.4 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4417GH/J -10V o -7.0V C -5.0V -4. -3 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 ...

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... AP4417GH =-30V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100.0 10 Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area Gate-to-Source Voltage (V) GS Fig 11 ...