AP4528GM Advanced Power Electronics Corp., AP4528GM Datasheet - Page 5

• Manufacturer Part Number: AP4528GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4528GM

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 52
• Qg (nc): 7
• Qgs (nc): 1.2
• Qgd (nc): 3.4
• Id(a): 5.8
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
12
10
30
20
10
8
4
0
0
1
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Single Pulse
V
T
DS
A
3
=25
=5V
V
V
GS
Q
DS
o
C
G
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
6
1
2
I
DS
D
T
= 5 A
= 30 V
j
=25
9
o
C
10
12
4
T
j
=150
15
o
100ms
100us
10ms
C
1ms
DC
1s
100
18
6
Fig 10. Effective Transient Thermal Impedance
0.001
1000
0.01
100
0.1
10
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.02
0.01
Duty factor=0.5
0.05
0.2
0.1
G
5
0.001
Single Pulse
Q
V
DS
GS
9
, Drain-to-Source Voltage (V)
0.01
t , Pulse Width (s)
Q
Q
13
G
GD
Charge
0.1
17
1
P
AP4528GM
DM
Duty factor = t/T
Peak T
R
thja
21
=135
j
t
= P
o
C/W
DM
f=1.0MHz
T
10
x R
25
thja
+ T
C
C
Q
C
a
iss
rss
oss
100
29
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