AP9477GK-HF Advanced Power Electronics Corp., AP9477GK-HF Datasheet - Page 4

• Manufacturer Part Number: AP9477GK-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9477GK-HF

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 90
• Rds(on) / Max(m?) Vgs@4.5v: 110
• Qg (nc): 6.5
• Qgs (nc): 1.5
• Qgd (nc): 3.5
• Id(a): 4.1
• Pd(w): 2.8
• Configuration: Single N
• Package: SOT-223

AP9477GK-HF
0.01
100
0.1
20
15
10
12
10
10
5
0
8
6
4
2
0
1
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Single Pulse
V
T
DS
A
=25
=5V
V
Q
DS
o
4
V
G
C
V
V
I
DS
, Drain-to-Source Voltage (V)
V
GS
, Total Gate Charge (nC)
D
DS
2
1
=4A
=32V
DS
, Gate-to-Source Voltage (V)
=40V
=48V
T
8
j
=25
o
C
10
4
12
T
j
=150
100us
100ms
10ms
1ms
DC
o
1s
C
16
100
6
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
100
0.01
10
0.1
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
Single Pulse
Duty factor=0.5
G
0.02
0.01
5
0.05
0.2
0.1
0.001
Q
V
GS
DS
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.01
Q
13
Q
Charge
G
GD
0.1
17
1
P
DM
Duty factor = t/T
Peak T
R
21
thja
= 150℃/W
j
= P
t
f=1.0MHz
DM
T
10
x R
25
thja
C
C
C
Q
+ T
iss
oss
rss
a
100
29
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