AP9563GH Advanced Power Electronics Corp., AP9563GH Datasheet - Page 3

• Manufacturer Part Number: AP9563GH
• Description: The TO-252 package is widely preferred for commercial-industrial Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9563GH

• Vds: -40V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 40
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 16
• Qgs (nc): 2.5
• Qgd (nc): 9
• Id(a): -26
• Pd(w): 39
• Configuration: Single P
• Package: TO-252

80
60
40
20
36
32
28
24
20
20
16
12
0
8
4
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
0.2
-V
-V
-V
o
Reverse Diode
C
SD
GS
DS
2
4
T
0.4
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
j
=150
0.6
o
C
4
6
0.8
I
T
D
C
= -12 A
=25
T
j
=25
1
℃
6
8
V
o
G
C
= -3.0 V
1.2
-7.0V
-4.5V
-5.0V
-10V
1.4
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
1.8
1.6
1.4
1.2
0.8
0.6
0
1
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
T
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
V
I
C
D
G
= 150
=-16A
=-10V
Junction Temperature
-V
v.s. Junction Temperature
o
2
T
C
T
DS
j
0
0
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
4
50
50
6
AP9563GH/J
100
100
o
V
o
C)
8
C)
G
= -3.0 V
-7.0V
-4.5V
-5.0V
-10V
10
150
150
3