AP9563GJ Advanced Power Electronics Corp., AP9563GJ Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9563GJ

Manufacturer Part Number
AP9563GJ
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP9563GH.pdf (4 pages)

Specifications of AP9563GJ

Vds
-40V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
40
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
16
Qgs (nc)
2.5
Qgd (nc)
9
Id(a)
-26
Pd(w)
39
Configuration
Single P
Package
TO-251
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9563GJ) is
available for low-profile applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.31
+25
-40
-26
-16
-64
39
DS(ON)
DSS
Value
62.5
110
3.2
G
AP9563GH/J
G
D
S
D S
TO-252(H)
TO-251(J)
40mΩ
200902133
-40V
-26A
Units
W/℃
Units
℃/W
℃/W
℃/W
W
℃
℃
V
V
A
A
A
1

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AP9563GJ Summary of contents

Page 1

... The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9563GJ) is available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP9563GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate ...

Page 3

Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics - ℃ ...

Page 4

AP9563GH =-32V DS I =-12A Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse ...

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