AP9565BGH-HF Advanced Power Electronics Corp., AP9565BGH-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP9565BGH-HF

Manufacturer Part Number
AP9565BGH-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9565BGH-HF

Vds
-40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
52
Rds(on) / Max(m?) Vgs@4.5v
90
Qg (nc)
7.8
Qgs (nc)
1.7
Qgd (nc)
4.8
Id(a)
-17
Pd(w)
25
Configuration
Single P
Package
TO-252

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP9565BGH-HF
Manufacturer:
NSC
Quantity:
314
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP9565BGJ) is
available for low-profile applications.
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
AP9565BGH/J-HF
Rating
BV
R
I
D
+20
-40
-17
-11
-60
0.2
25
DS(ON)
G
DSS
D
G
Value
62.5
110
S
5.0
D
S
TO-252(H)
TO-251(J)
52mΩ
201111142
-40V
-17A
Units
W/℃
Units
℃/W
℃/W
℃/W
W
V
V
A
A
A
1

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AP9565BGH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V GS 1 Parameter AP9565BGH/J-HF Halogen-Free Product BV -40V D DSS R 52mΩ DS(ON) I -17A ...

Page 2

... AP9565BGH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =-10V G 1.5 1.2 0.9 0.6 10 -50 Fig 4. Normalized On-Resistance 1.4 1.2 1 0.8 0.6 0.4 1.4 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9565BGH/J-HF -10V o C -7.0V -5.0V -4. -3 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 ...

Page 4

... AP9565BGH/J- -32V - Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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