AP9565GEH Advanced Power Electronics Corp., AP9565GEH Datasheet
AP9565GEH
Specifications of AP9565GEH
Related parts for AP9565GEH
AP9565GEH Summary of contents
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... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9565GEH/J RoHS-compliant Product BV -40V DSS R 38mΩ DS(ON) I -24A TO-252( ...
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... AP9565GEH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 - -10V G 1.4 1.0 0 Fig 4. Normalized On-Resistance 60.0 50 40.0 30.0 20.0 1.2 1.4 0 Fig 6. On-Resistance vs. AP9565GEH/J -10V o C -7.0V -5.0V -4. -3 Drain-to-Source Voltage ( 100 125 Junction Temperature ( C) j v.s. Junction Temperature V =-4. =-10V ...
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... AP9565GEH Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - = ...