AP9575AGI-HF Advanced Power Electronics Corp., AP9575AGI-HF Datasheet
AP9575AGI-HF
Specifications of AP9575AGI-HF
Related parts for AP9575AGI-HF
AP9575AGI-HF Summary of contents
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... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9575AGI-HF Halogen-Free Product BV -60V DSS R 64mΩ DS(ON) I -17A TO-220CFM(I) S Rating Units -60 ...
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... AP9575AGI-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2 -10V G 2.0 1.6 1.2 0.8 0 -50 T Fig 4. Normalized On-Resistance 1.4 1.2 1 0.8 0.6 0.4 0.2 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9575AGI-HF -10V o C -7.0V -6.0V -5. -4. Drain-to-Source Voltage ( 100 o , Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( C) ...
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... AP9575AGI- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS(ON = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...