AP9576GH Advanced Power Electronics Corp., AP9576GH Datasheet
AP9576GH
Specifications of AP9576GH
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AP9576GH Summary of contents
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... Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9576GH/J RoHS-compliant Product BV -60V DSS R 100mΩ DS(ON) I -14A TO-252( ...
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... AP9576GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 2 10V G 1.6 1.2 0.8 0.4 10 -50 T Fig 4. Normalized On-Resistance 2.0 1.5 o =25 C 1.0 0.5 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9576GH/J -10V o C -7.0V -5.0V -4. -3 Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...
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... AP9576GH -10A -48V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100.0 10 Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...