AP95T06GP-HF Advanced Power Electronics Corp., AP95T06GP-HF Datasheet - Page 3

• Manufacturer Part Number: AP95T06GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP95T06GP-HF

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 8.5
• Rds(on) / Max(m?) Vgs@4.5v: 12
• Qg (nc): 72
• Qgs (nc): 16
• Qgd (nc): 53
• Id(a): 75
• Pd(w): 138
• Configuration: Single N
• Package: TO-220

11
10
250
200
150
100
9
8
7
50
50
40
30
20
10
0
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
T
V
V
DS
Reverse Diode
j
SD
=150
GS
4
3
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
Gate-to-Source Voltage (V)
T
C
o
C
= 25
0.6
o
C
6
6
T
I
0.8
C
D
=25
=20A
T
o
C
1
j
=25
9
8
V
G
o
C
=3.0V
1.2
7.0 V
5.0V
4.5V
10V
1.4
12
10
120
2.0
1.5
1.0
0.5
0.0
1.6
1.2
0.8
0.4
80
40
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=45A
=10V
V
v.s. Junction Temperature
Junction Temperature
DS
T
T
3
0
T
0
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
C
, Junction Temperature (
= 150
AP95T06GS/P-HF
o
C
6
50
50
100
9
100
V
o
o
C)
G
C)
=3.0V
7.0 V
5.0V
4.5V
10V
150
12
150
3