AP9960GH Advanced Power Electronics Corp., AP9960GH Datasheet
AP9960GH
Specifications of AP9960GH
Related parts for AP9960GH
AP9960GH Summary of contents
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... Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9960GH/J Pb Free Plating Product BV 40V DSS R 16mΩ DS(ON) I 42A TO-252( TO-251(J) S Rating ...
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... AP9960GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1.8 I =20A D =20A V =10V G =25 ℃ ℃ ℃ ℃ 1.4 1.0 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 2.0 1.5 1.0 0.5 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9960GH/J 10V o C 8.0V 6.0V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 175 ...
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... AP9960GH =20A =12V =16V DS V =20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...