AP9466GS Advanced Power Electronics Corp., AP9466GS Datasheet - Page 4

• Manufacturer Part Number: AP9466GS
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9466GS

• Vds: 40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 13.5
• Rds(on) / Max(m?) Vgs@4.5v: 21
• Qg (nc): 13.5
• Qgs (nc): 2.6
• Qgd (nc): 9.4
• Id(a): 40
• Pd(w): 36.7
• Configuration: Single N
• Package: TO-263

AP9466GS
1000
100
0.1
10
14
12
10
1
8
6
4
2
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
V
90%
10%
V
DS
GS
Single Pulse
5
V
I
T
D
DS
Q
C
=26A
V
=25
G
t
, Drain-to-Source Voltage (V)
DS
d(on)
V
, Total Gate Charge (nC)
=20V
10
o
DS
1
V
C
=24V
t
DS
r
=32V
15
10
20
t
d(off)
t
f
25
10us
100us
1ms
10ms
100ms
DC
100
30
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
10
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
G
5
Duty factor=0.5
0.01
0.0001
0.02
0.05
V
Single Pulse
0.2
0.1
Q
DS
GS
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
f=1.0MHz
j
= P
t
0.1
DM
T
x R
25
thjc
Crss
Coss
+ T
Q
Ciss
C
29
1
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