AP9971AGD Advanced Power Electronics Corp., AP9971AGD Datasheet - Page 4

• Manufacturer Part Number: AP9971AGD
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9971AGD

• Vds: 60V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 50
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 17.5
• Qgs (nc): 2
• Qgd (nc): 6.3
• Id(a): 5
• Pd(w): 2
• Configuration: Dual N
• Package: PDIP-8

AP9971AGD
0.01
100
0.1
10
14
12
10
1
8
6
4
2
0
0.1
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
0
Fig 7. Gate Charge Characteristics
I
Single Pulse
V
90%
10%
D
V
T
=5A
DS
GS
A
=25
V
5
DS
V
o
Q
t
C
, Drain-to-Source Voltage (V)
DS
d(on)
V
G
=30V
DS
V
, Total Gate Charge (nC)
1
=36V
DS
t
10
r
=48V
15
10
t
d(off)
20
t
f
100ms
100us
10ms
1ms
DC
1s
100
25
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.001
100
0.01
10
0.1
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
0.01
Single Pulse
0.02
0.05
0.2
0.1
Duty foctor=0.5
G
0.001
5
V
Q
DS
GS
0.01
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
Q
Q
13
0.1
G
Charge
GD
17
1
P
DM
21
Duty factor = t/T
Peak T
Rthja=90℃/W
10
f=1.0MHz
j
= P
t
DM
T
x R
25
100
Crss
Coss
thja
Q
Ciss
+ T
a
29
1000
4