AP9971AGJ Advanced Power Electronics Corp., AP9971AGJ Datasheet - Page 3

• Manufacturer Part Number: AP9971AGJ
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9971AGJ

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Qg (nc): 17
• Qgs (nc): 2.5
• Qgd (nc): 6.4
• Id(a): 22
• Pd(w): 34.7
• Configuration: Single N
• Package: TO-251

20
16
12
80
60
40
20
50
40
30
20
8
4
0
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
0.2
V
o
V
C
V
Reverse Diode
DS
SD
GS
2
4
T
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
Gate-to-Source Voltage (V)
j
=150
o
0.6
C
4
6
T
I
0.8
C
D
=25
=10A
T
o
C
1
j
=25
6
8
V
o
G
C
1.2
= 4 .0V
7 .0 V
5.0 V
4.5 V
10 V
1.4
10
8
2.0
1.6
1.2
0.8
0.4
1.5
1.3
1.1
0.9
0.7
0.5
50
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
C
D
G
= 150
=15A
=10V
V
v.s. Junction Temperature
Junction Temperature
DS
o
T
T
C
2
0
0
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
50
4
50
AP9971AGH/J
100
100
V
6
o
o
G
C)
C)
= 4.0 V
7 .0 V
5.0 V
4.5 V
10 V
150
150
8
3