AP9975GM Advanced Power Electronics Corp., AP9975GM Datasheet
AP9975GM
Specifications of AP9975GM
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AP9975GM Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter 10V 10V GS 1 Parameter 3 AP9975GM BV 60V DSS R 21mΩ DS(ON Rating Units 60 V + ...
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... AP9975GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... = =10V G 2.0 1.5 1.0 0.5 0.0 -50 11 Fig 4. Normalized On-Resistance 2 0.5 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9975GM 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 ...
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... AP9975GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...