AP15P10GP Advanced Power Electronics Corp., AP15P10GP Datasheet - Page 3

• Manufacturer Part Number: AP15P10GP
• Description: Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP15P10GP

• Vds: -100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 230
• Qg (nc): 37
• Qgs (nc): 5
• Qgd (nc): 15
• Id(a): -15
• Pd(w): 96
• Configuration: Single P
• Package: TO-220

550
450
350
250
150
10
30
20
10
8
6
4
2
0
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
-V
Reverse Diode
o
5
-V
-V
SD
C
4
GS
DS
T
, Source-to-Drain Voltage (V)
j
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
=150
0.4
10
o
C
6
15
0.8
T
I
D
C
T
= -6 A
8
V
=25
j
G
20
=25
= - 3 .0V
℃
-7.0V
-5.0V
-4.5V
o
-10V
C
1.2
10
25
2.4
1.9
1.4
0.9
0.4
1.5
1.1
0.7
0.3
30
20
10
0
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
V
I
T
G
D
= - 10V
C
= -6 A
= 150
Junction Temperature
v.s. Junction Temperature
-V
T
5
T
j
o
DS
0
0
j
, Junction Temperature (
C
, Junction Temperature (
, Drain-to-Source Voltage (V)
10
50
50
AP15P10GS/P
15
V
100
100
o
G
C)
o
= - 3 .0V
20
C)
-4.5V
-5.0V
-7.0V
-10V
150
25
150
3