AP25N10GP-HF Advanced Power Electronics Corp., AP25N10GP-HF Datasheet - Page 4

• Manufacturer Part Number: AP25N10GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP25N10GP-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 80
• Qg (nc): 19
• Qgs (nc): 5
• Qgd (nc): 6
• Id(a): 23
• Pd(w): 96
• Configuration: Single N
• Package: TO-220

AP25N10GS/P-HF
100
0.1
14
12
10
10
25
20
15
10
8
6
4
2
0
1
5
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
T
Single Pulse
V
c
=25
DS
=5V
V
5
o
DS
C
2
V
Q
GS
1
, Drain-to-Source Voltage (V)
G
V
V
V
, Gate-to-Source Voltage (V)
I
, Total Gate Charge (nC)
D
10
DS
DS
DS
= 16 A
T
= 48 V
= 64 V
= 80 V
4
j
=25
10
15
o
C
6
T
20
j
=150
100
100ms
100us
10ms
1ms
8
DC
1s
o
C
25
1000
10
30
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
10
0.1
1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
DUTY=0.5
0.01
SINGLE PULSE
0.02
0.05
0.1
G
0.2
5
V
0.0001
DS
Q
GS
,Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
+ T
Q
C
C
C
C
oss
rss
iss
1
29
4