AP30P10GP-HF Advanced Power Electronics Corp., AP30P10GP-HF Datasheet - Page 3

• Manufacturer Part Number: AP30P10GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP30P10GP-HF

• Vds: -100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 80
• Rds(on) / Max(m?) Vgs@4.5v: 100
• Qg (nc): 50
• Qgs (nc): 7.5
• Qgd (nc): 16.5
• Id(a): -25
• Pd(w): 89
• Configuration: Single P
• Package: TO-220

80
60
40
20
80
76
72
68
64
60
0
25
20
15
10
5
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
0.2
-V
-V
Reverse Diode
o
-V
4
C
SD
DS
T
4
GS
j
0.4
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
=150
, Gate-to-Source Voltage (V)
8
o
0.6
C
6
T
I
0.8
D
C
12
= -8 A
=25
℃
T
1
j
=25
8
V
16
G
o
= - 4 .0 V
1.2
C
- 7 .0V
- 6 .0V
- 5.0 V
-10V
1.4
20
10
2.0
1.6
1.2
0.8
0.4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
60
50
40
30
20
10
0
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
T
I
V
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
D
C
G
= - 12 A
=150
= -10V
-V
Junction Temperature
v.s. Junction Temperature
o
4
DS
T
C
T
j
0
0
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
8
AP30P10GP-HF
50
50
12
100
100
o
o
16
C)
V
C)
G
= -4.0V
-10V
-7.0V
-6.0V
-5.0V
20
150
150
3