AP95T10GP-HF Advanced Power Electronics Corp., AP95T10GP-HF Datasheet - Page 3

• Manufacturer Part Number: AP95T10GP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP95T10GP-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 6.4
• Qg (nc): 110
• Qgs (nc): 19
• Qgd (nc): 58
• Id(a): 150
• Pd(w): 375
• Configuration: Single N
• Package: TO-220

320
240
160
80
60
50
40
30
20
10
12
10
0
0
8
6
4
Fig 3. On-Resistance v.s. Gate Voltage
0
0
4
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
0.2
4
V
5
T
V
DS
V
Reverse Diode
T
j
SD
=175
GS
C
, Drain-to-Source Voltage (V)
0.4
= 25
8
, Source-to-Drain Voltage (V)
,Gate-to-Source Voltage (V)
6
o
o
C
C
0.6
12
7
I
T
0.8
16
D
A
=40A
=25
8
T
o
j
20
C
1
=25
V
o
C
GS
9
1.2
24
=5.0V
8.0V
7.0V
6.0V
10V
1.4
28
10
160
120
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.6
1.2
0.8
0.4
0.0
80
40
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=60A
=10V
V
v.s. Junction Temperature
Junction Temperature
0
0
4
DS
T
T
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
T
C
50
50
= 175
8
AP95T10GP-HF
o
C
100
100
12
o
o
150
V
150
C)
16
C)
GS
=5.0V
8.0V
7.0V
6.0V
10V
200
200
20
3