AP60T10GS Advanced Power Electronics Corp., AP60T10GS Datasheet

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... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP60T10GS/P RoHS-compliant Product BV 100V DSS R 18mΩ DS(ON) I 67A D G TO-220( TO-263(S) ...

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... AP60T10GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

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... Fig 2. Typical Output Characteristics 2 28A 10V G 2.0 1.6 1.2 0.8 0.4 -50 150 o C) Fig 4. Normalized On-Resistance 1.6 1 0.8 0.4 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP60T10GS 10V 9.0V 8. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 o ...

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... AP60T10GS Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited by 100 R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...