AP80T10AGP-HF Advanced Power Electronics Corp., AP80T10AGP-HF Datasheet - Page 4

• Manufacturer Part Number: AP80T10AGP-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP80T10AGP-HF

• Vds: 100V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12.5
• Qg (nc): 67
• Qgs (nc): 15
• Qgd (nc): 31
• Id(a): 75
• Pd(w): 166
• Configuration: Single N
• Package: TO-220

AP80T10AGP-HF
1000
100
12
10
10
8
6
4
2
0
1
0.1
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
0
I
Fig 7. Gate Charge Characteristics
Operation in this
D
area limited by
10%
90%
V
V
= 40 A
R
T
Single Pulse
DS
DS(ON)
GS
c
=25
V
V
DS
Q
o
20
1
t
V
C
DS
G
d(on)
, Drain-to-Source Voltage (V)
DS
V
, Total Gate Charge (nC)
= 50 V
DS
= 60 V
t
= 80 V
r
10
40
t
d(off)
100
60
100us
1ms
10ms
100ms
DC
t
f
1000
80
Fig 10. Effective Transient Thermal Impedance
Fig 8. Typical Capacitance Characteristics
4000
3000
2000
1000
0.01
0.1
0.00001
0
1
1
Fig 12. Gate Charge Waveform
10V
V
G
Duty factor=0.5
0.01
0.1
0.02
5
0.2
0.05
Single Pulse
V
0.0001
DS
Q
GS
,Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.001
Q
Q
13
G
Charge
GD
17
0.01
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
f=1.0MHz
DM
T
x R
25
thjc
Q
+ T
C
C
C
C
oss
iss
rss
1
29
4