AP04N20GK-HF Advanced Power Electronics Corp., AP04N20GK-HF Datasheet

AP04N20 uses rugged design with the best combination of fast switching and cost-effectiveness

AP04N20GK-HF

Manufacturer Part Number
AP04N20GK-HF
Description
AP04N20 uses rugged design with the best combination of fast switching and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP04N20GK-HF

Vds
200V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
1200
Rds(on) / Max(m?) Vgs@4.5v
1300
Qg (nc)
8.5
Qgs (nc)
1.1
Qgd (nc)
2.1
Id(a)
1
Pd(w)
2.7
Configuration
Single N
Package
SOT-223
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
AP04N20 uses rugged design with the best combination of fast
switching and cost-effectiveness.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
GS
GS
@ 10V
@ 10V
G
3
3
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
D
S
Halogen-Free Product
-55 to 150
-55 to 150
SOT-223
Rating
BV
R
I
D
200
+20
0.8
2.7
AP04N20GK-HF
DS(ON)
1
4
DSS
D
Value
45
G
D
201010121
1.2Ω
S
200V
Units
℃/W
Unit
1A
W
V
V
A
A
A
1

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AP04N20GK-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter 3 @ 10V 10V GS 1 Parameter 3 AP04N20GK-HF Halogen-Free Product BV 200V D DSS R 1.2Ω DS(ON SOT-223 Rating Units ...

Page 2

... AP04N20GK-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =10V -50 150 C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 I =250uA D 1 1.2 0.8 0.4 0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP04N20GK-HF o 10V C 7. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( ...

Page 4

... AP04N20GK- = =160V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 10 Operation in this area limited by R DS(ON) 1 0 Single Pulse 0.001 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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