AP18N20GS-HF Advanced Power Electronics Corp., AP18N20GS-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP18N20GS-HF

Manufacturer Part Number
AP18N20GS-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP18N20GS-HF

Vds
200V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
170
Qg (nc)
19
Qgs (nc)
5
Qgd (nc)
6
Id(a)
18
Pd(w)
89
Configuration
Single N
Package
TO-263

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP18N20GS-HF
Manufacturer:
P-TWO
Quantity:
2 417
Part Number:
AP18N20GS-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18N20GS)
are available for low-profile applications.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
1
Parameter
GS
GS
G
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
-55 to 150
-55 to 150
3
AP18N20GS/P-HF
G
Rating
BV
R
I
D
200
+20
9.5
0.7
18
60
89
DS(ON)
D
DSS
S
G
Value
1.4
40
62
D
S
TO-220(P)
TO-263(S)
170mΩ
201001113
200V
Units
W/℃
Units
℃/W
℃/W
℃/W
18A
W
V
V
A
A
A
1

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AP18N20GS-HF Summary of contents

Page 1

... The TO-220 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18N20GS) are available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

... AP18N20GS/P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 =10V G 2.4 2.0 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance 1.5 1.3 1 0.9 0.7 0.5 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP18N20GS/ Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o T ...

Page 4

... AP18N20GS/P- 100 130 160 Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 15 V =5V ...

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