IRF630 Advanced Power Electronics Corp., IRF630 Datasheet - Page 3

• Manufacturer Part Number: IRF630
• Description: APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
• Manufacturer: Advanced Power Electronics Corp.

Specifications of IRF630

• Vds: 200V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 400
• Qg (nc): 25
• Qgs (nc): 4
• Qgd (nc): 14
• Id(a): 9
• Pd(w): 74
• Configuration: Single N
• Package: TO-220

1.2
1.1
0.9
0.8
10
16
12
8
6
4
2
0
1
8
4
0
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
C
=25
0.2
Temperature
V
Reverse Diode
o
T
V
C
SD
j
DS
2
0
, Junction Temperature (
, Source-to-Drain Voltage (V)
0.4
T
, Drain-to-Source Voltage (V)
j
= 150
0.6
o
C
50
4
0.8
DSS
v.s. Junction
T
1
j
100
o
6
= 25
C)
V
o
1.2
C
G
=5.0V
8.0V
7.0V
6.0V
10V
1.4
150
8
1.4
1.2
0.8
0.6
0.4
12
10
8
6
4
2
0
3
2
1
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
T
D
G
C
=5.4A
=10V
=150
2
v.s. Junction Temperature
V
Junction Temperature
o
DS
C
T
T
0
0
j
, Drain-to-Source Voltage (V)
j
4
, Junction Temperature (
, Junction Temperature (
6
50
50
8
10
100
100
o
o
C)
C )
V
IRF630
G
12
=5 .0V
8 .0V
7 .0V
6.0 V
10V
150
150
14
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