AP09N70P-H-LF Advanced Power Electronics Corp., AP09N70P-H-LF Datasheet - Page 3

• Manufacturer Part Number: AP09N70P-H-LF
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP09N70P-H-LF

• Vds: 700V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 850
• Qg (nc): 44
• Qgs (nc): 11
• Qgd (nc): 12
• Id(a): 8.3
• Pd(w): 156
• Configuration: Single N
• Package: TO-220

100
0.1
1.2
1.1
0.9
0.8
10
10
8
6
4
2
0
1
1
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
C
=25
0.2
Temperature
V
o
T
Reverse Diode
C
V
T
SD
j
DS
j
= 150
3
0
, Junction Temperature (
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.4
o
C
50
0.6
6
DSS
0.8
v.s. Junction
100
T
9
o
V
C)
j
G
= 25
= 3 .5 V
1
6.0V
5.0V
4.5V
4.0V
10V
o
C
150
1.2
12
10
3
2
1
0
8
6
4
2
0
5
4
3
2
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
C
G
D
=150
=10V
=4A
v.s. Junction Temperature
V
Junction Temperature
5
o
DS
C
T
T
0
0
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
10
50
50
AP09N70P/R-H
15
100
100
o
o
C)
20
V
C )
G
= 3 .5 V
6.0V
5.0V
4.5V
4.0V
10V
150
150
25
3