AP11N50I Advanced Power Electronics Corp., AP11N50I Datasheet - Page 3

• Manufacturer Part Number: AP11N50I
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP11N50I

• Vds: 500V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 620
• Qg (nc): 43
• Qgs (nc): 8
• Qgd (nc): 20
• Id(a): 11
• Pd(w): 40
• Configuration: Single N
• Package: TO-220CFM

1.2
1.1
0.9
0.8
20
16
12
10
8
4
0
8
6
4
2
0
1
0.0
-50
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
C
=25
4.0
0.2
Temperature
V
Reverse Diode
o
T
C
DS
V
j
0
SD
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
8.0
0.4
T
j
=150
12.0
0.6
o
50
C
DSS
16.0
0.8
v.s. Junction
100
T
o
V
C)
j
=25
20.0
G
1
= 4.5 V
o
7.0 V
6.0 V
5.0V
10 V
C
24.0
1.2
150
2.8
2.4
2.0
1.6
1.2
0.8
0.4
1.5
1.3
1.1
0.9
0.7
0.5
12
10
8
6
4
2
0
Fig 4. Normalized On-Resistance
0.0
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
T
I
V
C
D
G
=150
=6A
=10V
4.0
v.s. Junction Temperature
V
o
T
Junction Temperature
DS
C
j
T
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
8.0
j
, Junction Temperature (
12.0
50
50
16.0
20.0
AP11N50I
100
100
o
C )
o
V
C)
G
24.0
= 4.5V
7.0 V
6.0 V
5.0V
1 0 V
150
28.0
150
3