AP3990I-HF Advanced Power Electronics Corp., AP3990I-HF Datasheet - Page 4

• Manufacturer Part Number: AP3990I-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP3990I-HF

• Vds: 600V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 600
• Qg (nc): 34
• Qgs (nc): 11
• Qgd (nc): 11
• Id(a): 10
• Pd(w): 31.3
• Configuration: Complementary N-P
• Package: TO-220CFM

AP3990I-HF
0.01
12
10
100
0.1
10
8
6
4
2
0
1
0
Fig 7. Gate Charge Characteristics
1
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
Single Pulse
V
V
T
V
I
DS
GS
D
c
DS
=25
=10A
=480V
Q
o
V
C
DS
G
t
d(on)
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
20
10
t
r
100
40
t
d(off)
t
f
100ms
100us
10ms
1ms
DC
1000
60
Fig 10. Effective Transient Thermal Impedance
3200
2400
1600
800
0.001
0
0.01
0.1
1
0.00001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
10V
V
0.01
Duty factor=0.5
0.02
0.05
G
Single Pulse
0.1
0.2
5
0.0001
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.001
Q
Q
13
Charge
G
GD
0.01
17
P
0.1
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
f=1.0MHz
T
x R
1
25
thjc
+ T
C
C
C
Q
C
iss
oss
rss
10
29
4