IRF840S Advanced Power Electronics Corp., IRF840S Datasheet - Page 3

• Manufacturer Part Number: IRF840S
• Manufacturer: Advanced Power Electronics Corp.

Specifications of IRF840S

• Vds: 500V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 850
• Qg (nc): 45
• Qgs (nc): 7
• Qgd (nc): 25
• Id(a): 8
• Pd(w): 125
• Configuration: Single N
• Package: TO-263

1.2
1.1
0.9
0.8
10
16
12
8
6
4
2
0
8
4
0
1
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
C
=25
0.2
4
Temperature
Reverse Diode
o
V
T
V
C
DS
SD
j
0
T
, Junction Temperature (
0.4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
j
= 150
8
0.6
o
C
12
50
0.8
DSS
16
T
v.s. Junction
1
j
100
= 25
o
C)
V
20
o
G
1.2
C
=4.5V
7.0V
6.0V
5.0V
10V
150
24
1.4
1.4
1.2
0.8
0.6
0.4
8
6
4
2
0
3
2
1
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
C
D
G
=150
=4.8A
=10V
4
v.s. Junction Temperature
Junction Temperature
o
C
V
T
T
DS
0
0
j
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
8
12
50
50
16
100
100
o
IRF840S
o
C)
C )
V
20
G
= 4. 5 V
5 .0 V
7 .0V
6 .0V
10V
150
150
24
3