IRF830 Advanced Power Electronics Corp., IRF830 Datasheet - Page 3

• Manufacturer Part Number: IRF830
• Description: APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
• Manufacturer: Advanced Power Electronics Corp.

Specifications of IRF830

• Vds: 500V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 1500
• Qg (nc): 28
• Qgs (nc): 4
• Qgd (nc): 16
• Id(a): 4.5
• Pd(w): 74
• Configuration: Single N
• Package: TO-220

1.2
1.1
0.9
0.8
10
8
6
4
2
0
1
8
6
4
2
0
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
C
=25
0.2
o
Temperature
V
Reverse Diode
T
C
4
V
SD
j
DS
0
, Junction Temperature (
0.4
, Source-to-Drain Voltage (V)
T
, Drain-to-Source Voltage (V)
j
= 150
8
0.6
o
C
50
0.8
DSS
12
v.s. Junction
T
1
j
100
o
= 25
C)
16
V
G
o
1.2
7.0V
6.0V
5.0V
10V
C
=4.5V
150
20
1.4
1.4
1.2
0.8
0.6
0.4
5
4
3
2
1
0
3
2
1
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
D
C
G
=2.7A
=150
=10V
4
v.s. Junction Temperature
V
Junction Temperature
o
C
DS
T
T
0
0
j
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
, Junction Temperature (
8
12
50
50
16
100
100
o
o
C)
C )
V
20
IRF830
G
= 4. 5 V
5 .0 V
7 .0V
6 .0V
10V
150
150
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