MC74VHC1G07DTT1G ON Semiconductor, MC74VHC1G07DTT1G Datasheet - Page 2

IC BUFFER NON-INV O/DRAIN SOT235

MC74VHC1G07DTT1G

Manufacturer Part Number
MC74VHC1G07DTT1G
Description
IC BUFFER NON-INV O/DRAIN SOT235
Manufacturer
ON Semiconductor
Series
74VHCr
Datasheet

Specifications of MC74VHC1G07DTT1G

Logic Type
Buffer/Line Driver, Non-Inverting
Number Of Elements
1
Number Of Bits Per Element
1
Voltage - Supply
2 V ~ 5.5 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
TSOT-23-5, TSOT-5, TSOP-5
Logic Family
VHC
Number Of Channels Per Chip
1
Polarity
Non-Inverting
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Low Level Output Current
8 mA
Maximum Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
Number Of Lines (input / Output)
1 / 1
Output Type
Open Drain
Propagation Delay Time
10.6 ns at 3.3 V, 7.5 ns at 5 V
Logical Function
Buffer/Driver
Number Of Elements
1
Number Of Channels
1
Number Of Inputs
1
Number Of Outputs
1
Operating Supply Voltage (typ)
2.5/3.3/5V
Package Type
TSOP
High Level Output Current
8mA
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
2V
Quiescent Current
1uA
Technology
CMOS
Pin Count
5
Mounting
Surface Mount
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output High, Low
-
Lead Free Status / Rohs Status
 Details
Other names
MC74VHC1G07DTT1GOS
MC74VHC1G07DTT1GOS
MC74VHC1G07DTT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC74VHC1G07DTT1G
Manufacturer:
ON Semiconductor
Quantity:
500
Part Number:
MC74VHC1G07DTT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
MAXIMUM RATINGS
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
I
Symbol
Symbol
LATCHUP
Temperature °C
V
T
V
V
I
MSL
V
V
t
V
I
OUT
I
q
V
P
F
r
I
STG
T
T
OUT
T
ESD
OUT
OK
CC
CC
IK
CC
JA
, t
IN
IN
Junction
D
R
A
L
J
f
100
110
120
130
140
80
90
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current, per Pin
DC Supply Current, V
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Latchup Performance
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
CC
and GND Pin
Time, Years
Parameter
Parameter
Above V
117.8
47.9
20.4
9.4
4.2
2.0
1.0
http://onsemi.com
MC74VHC1G07
CC
SC70−5/SC−88A/SOT−353 (Note 1)
and Below GND at 125°C (Note 5)
Charged Device Model (Note 4)
Human Body Model (Note 2)
2
V
SOT23−5/TSOP−5/SC59−5
SOT23−5/TSOP−5/SC59−5
OUT
SC70−5/SC−88A/SOT−353
Machine Model (Note 3)
Oxygen Index: 28 to 34
Figure 3. Failure Rate vs. Time Junction Temperature
t GND; V
V
V
CC
CC
1
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
1
OUT
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
u V
CC
10
UL 94 V−0 @ 0.125 in
TIME, YEARS
*55
Min
2.0
0.0
0.0
0
0
*0.5 to )7.0
*0.5 to )7.0
*65 to )150
−0.5 to +7.0
Level 1
u2000
Value
)150
u200
$500
*20
)20
)25
+50
N/A
260
350
230
150
200
100
)125
Max
100
5.5
5.5
7.0
20
1000
°C/W
ns/V
Unit
Unit
mW
mA
mA
mA
mA
mA
°C
°C
°C
°C
V
V
V
V
V
V
V

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