SKM50GB063D SEMIKRON, SKM50GB063D Datasheet
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Manufacturer Part Number
SKM50GB063D
Specifications of SKM50GB063D
Family/system
SEMITRANS
Voltage (v)
600
Current (a)
50
Chip-type
NPT IGBT (Standard)
Available stocks
SKM50GB063D
Superfast NPT-IGBT
Modules
SKM50GB063D
Target Data
Features
• NPT = non punch-through
• High short circuit capability, self
• Pos. temp.-coeff. of VCEsat
• Isolated copper baseplate
Typical Applications*
• Switched mode power supplies
• UPS
• Three phase inverters for servo / AC
© by SEMIKRON
SEMITRANS
IGBT technology
limiting to 6 x IC
motor speed control
GB
®
2
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 2 – 22.04.2010
T
T
V
V
V
t
T
I
V
chiplevel
V
V
V
V
V
V
T
V
I
V
R
R
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
terminal
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
GE
G on
G off
= 10 ms, sin 180°, T
= 25 °C
= 150 °C
= 50 A
= 25 °C
= 50 A
=V
= 600 V
= 25 V
= 300 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 20 V
= 300 V
= ±15 V
= 2xI
= 2xI
≤ 600 V
= 22 Ω
= 22 Ω
CE
< 80 °C
, I
Fnom
Cnom
C
= 1 mA
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
= 125 °C
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 75 °C
= 25 °C
= 80 °C
= 25 °C
min.
4.5
-55 ... 150
-40 ... 150
-40 ... 125
-20 ... 20
Values
2500
typ.
1.05
21.0
28.0
600
100
100
200
300
2.1
2.4
5.5
0.1
2.2
0.2
2.5
1.8
70
51
50
10
75
45
50
50
40
30
1
max.
24.0
32.0
2.5
2.8
1.3
1.2
6.5
0.3
0.5
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
Ω
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1
Related parts for SKM50GB063D
SKM50GB063D Summary of contents
... SKM50GB063D ® SEMITRANS 2 Superfast NPT-IGBT Modules SKM50GB063D Target Data Features • NPT = non punch-through IGBT technology • High short circuit capability, self limiting • Pos. temp.-coeff. of VCEsat • Isolated copper baseplate Typical Applications* • Switched mode power supplies • ...
... SKM50GB063D ® SEMITRANS 2 Superfast NPT-IGBT Modules SKM50GB063D Target Data Features • NPT = non punch-through IGBT technology • High short circuit capability, self limiting • Pos. temp.-coeff. of VCEsat • Isolated copper baseplate Typical Applications* • Switched mode power supplies • ...
... SKM50GB063D Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 22.04.2010 = ...
... SKM50GB063D Fig. 7: Typ. switching times vs. I Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 2 – 22.04.2010 ...
... SKM50GB063D SEMITRANS 2 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...
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