SEMiX452GB176HDs SEMIKRON, SEMiX452GB176HDs Datasheet

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SEMiX452GB176HDs

Manufacturer Part Number
SEMiX452GB176HDs
Description
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMiX452GB176HDs

Family/system
SEMiX
Voltage (v)
1700
Current (a)
300
Chip-type
IGBT 3 (Trench)
Case
SEMiX 2s

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SEMIX452GB176HDS
Quantity:
50
SEMiX452GB176HDs
Trench IGBT Modules
SEMiX452GB176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
© by SEMIKRON
SEMiX
coefficient
CE(sat)
with positive temperature
®
2s
GB
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
F
Fnom
FRM
FSM
t(RMS)
CES
psc
d(on)
r
d(off)
f
CE
CES
GES
j
j
stg
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 3 – 13.01.2012
T
T
V
V
V
T
t
T
I
V
chiplevel
V
V
V
V
V
V
T
V
I
V
R
R
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
terminal
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
GE
G on
G off
= 10 ms, sin 180°, T
= 25 °C
= 150 °C
= 150 °C
= 300 A
= 25 °C
= 300 A
=V
= 1700 V
= 25 V
= 1000 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 1200 V
= ±15 V
= 2xI
= 2xI
≤ 1700 V
= 4 
= 4 
CE
= 80 °C
, I
Fnom
Cnom
C
= 12 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5.2
-55 ... 150
-40 ... 150
-40 ... 125
-20 ... 20
Values
1700
2000
4000
2800
typ.
26.4
1.10
0.88
2.50
437
310
300
600
389
262
300
600
600
340
180
900
105
110
2.5
0.9
3.3
5.2
5.8
10
75
2
1
max.
0.073
2.45
2.9
1.2
1.1
4.2
6.0
6.4
3
Unit
Unit
K/W
m
m
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1

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SEMiX452GB176HDs Summary of contents

Page 1

... SEMiX452GB176HDs SEMiX ® 2s Trench IGBT Modules SEMiX452GB176HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders GB © by SEMIKRON Absolute Maximum Ratings Symbol Conditions ...

Page 2

... SEMiX452GB176HDs SEMiX ® 2s Trench IGBT Modules SEMiX452GB176HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders GB 2 Characteristics Symbol Conditions Inverse diode I = 300 A ...

Page 3

... SEMiX452GB176HDs Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 3 – 13.01.2012 = ...

Page 4

... SEMiX452GB176HDs Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 3 – 13.01.2012 ...

Page 5

... SEMiX452GB176HDs SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...

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