SEMiX452GAL126HDs SEMIKRON, SEMiX452GAL126HDs Datasheet

no-image

SEMiX452GAL126HDs

Manufacturer Part Number
SEMiX452GAL126HDs
Description
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMiX452GAL126HDs

Family/system
SEMiX
Voltage (v)
1200
Current (a)
300
Chip-type
IGBT 3 (Trench)
Case
SEMiX 2s
SEMiX452GAL126HDs
Trench IGBT Modules
SEMiX452GAL126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T
• Not for new design
© by SEMIKRON
SEMiX
coefficient
max.
CE(sat)
with positive temperature
®
2s
GAL
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Freewheeling diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
C
Cnom
CRM
F
Fnom
FRM
FSM
F
Fnom
FRM
FSM
t(RMS)
CES
psc
CE
CES
GES
j
j
j
stg
isol
CE(sat)
CE0
GE(th)
ies
oes
res
Gint
G
Rev. 1 – 17.01.2012
T
T
V
V
V
T
t
T
t
T
I
V
chiplevel
V
V
V
V
V
V
T
Conditions
I
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
p
p
C
CRM
FRM
FRM
j
j
j
j
terminal
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
GE
= 10 ms, sin 180°, T
= 10 ms, sin 180°, T
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 300 A
= 25 °C
=V
= 1200 V
= 25 V
= 600 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 2xI
= 2xI
= 2xI
≤ 1200 V
CE
= 80 °C
, I
Fnom
Fnom
Cnom
C
= 12 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
c
c
j
c
c
c
c
j
j
j
j
j
j
j
j
j
j
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 150
-40 ... 150
-40 ... 150
-40 ... 125
-20 ... 20
Values
1200
1900
1900
4000
2400
typ.
21.5
1.13
0.98
2.50
455
319
300
600
394
272
300
600
373
258
300
600
600
1.7
2.0
0.9
2.3
3.7
5.8
0.1
10
1
max.
2.45
2.1
1.2
1.1
3.0
4.5
6.5
0.3
Unit
Unit
m
m
mA
mA
nC
°C
°C
°C
°C
nF
nF
nF
µs
V
A
A
A
A
V
A
A
A
A
A
A
A
A
A
A
A
V
V
V
V
V
V
1

Related parts for SEMiX452GAL126HDs

SEMiX452GAL126HDs Summary of contents

Page 1

... SEMiX452GAL126HDs SEMiX ® 2s Trench IGBT Modules SEMiX452GAL126HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to T =125° ...

Page 2

... SEMiX452GAL126HDs SEMiX ® 2s Trench IGBT Modules SEMiX452GAL126HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to T =125° ...

Page 3

... SEMiX452GAL126HDs Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 1 – 17.01.2012 = ...

Page 4

... SEMiX452GAL126HDs Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 1 – 17.01.2012 ...

Page 5

... SEMiX452GAL126HDs SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...

Related keywords