IXTM67N10 IXYS, IXTM67N10 Datasheet

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IXTM67N10

Manufacturer Part Number
IXTM67N10
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTM67N10

Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
67
Rds(on), Max, Tj=25°c, (?)
0.025
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
260
Trr, Typ, (ns)
-
Pd, (w)
-
Rthjc, Max, (k/w)
-
Package Style
TO-204
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2003 IXYS All rights reserved
D25
DM
GSS
DSS
J
JM
stg
DSS
DGR
GS
GSM
D
DSS
GS(th)
DS(on)
d
T
T
Continuous
Transient
T
T
T
Mounting torque
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
Test Conditions
V
J
J
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
GS
, I
FET
D
D
DC
D
= 250 µA
DSS
= 4 mA
, V
= 0.5 I
DS
= 0
D25
GS
= 1 MΩ
T
T
67N10
75N10
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
JM
IXTH / IXTM 67N10
IXTH / IXTM 75N10
IXTT 75N10
67N10
75N10
67N10
75N10
TO-204
TO-247
TO-268
min.
100
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
100
100
±20
±30
268
300
300
150
67
75
18
0.025
0.020
6
5
max.
10
±100
250
4
1
mA
nA
µA
°C
°C
°C
W
A
A
V
V
V
V
A
A
g
g
g
V
V
°C
TO-247 AD (IXTH)
Features
Applications
Advantages
G = Gate,
S = Source,
TO-268 (IXTT)
TO-204 AE (IXTM)
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
100 V
100 V
V
DS (on)
DSS
G
HDMOS
D
S
D = Drain,
TAB = Drain
67 A 25 mΩ Ω Ω Ω Ω
75 A 20 mΩ Ω Ω Ω Ω
I
TM
D25
G
process
DS91533F(9/03)
(TAB)
R
D (TAB)
DS(on)
1

Related parts for IXTM67N10

IXTM67N10 Summary of contents

Page 1

... 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. © 2003 IXYS All rights reserved IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Maximum Ratings 100 = 1 MΩ ...

Page 2

... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ TO-268 (IXTT) Outline IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: IXTH / IXTM 67N10 IXTH / IXTM 75N10 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...

Page 3

... Fig. 5 Drain Current vs. Case Temperature Voltage 80 75N10 67N10 -50 - Degrees C C IXYS reserves the right to change limits, test conditions, and dimensions. © 2003 IXYS All rights reserved IXTH / IXTM 67N10 IXTH / IXTM 75N10 V = 10V 2.50 2.25 2.00 1.75 = 10V 1.50 1.25 ...

Page 4

... V - Volts DS Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: IXTH / IXTM 67N10 IXTH / IXTM 75N10 100 10 1 150 125 C 100 iss oss 25 C rss ...

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