IXTM50N20 IXYS, IXTM50N20 Datasheet - Page 3

• Manufacturer Part Number: IXTM50N20
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTM50N20

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.045
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): -
• Trr, Typ, (ns): -
• Pd, (w): -
• Rthjc, Max, (k/w): -
• Package Style: TO-204

© 2000 IXYS All rights reserved
125
100
100
75
50
25
90
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
-50
0
0
T
J
T
= 25°C
J
1
-25
= 25°C
25
50N20
42N20
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
2
50
0
3
T
Case Temperature
75
25
I
C
D
V
4
DS(on)
- Degrees C
V
- Amperes
DS
GS
100 125 150 175 200
- Volts
50
= 10V
5
vs. Drain Current
6
75
V
GS
7
V
100 125 150
GS
= 15V
= 10V
8
9V
8V
7V
6V
5V
9
10
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
90
80
70
60
50
40
30
20
10
0
-50
-50
0
1
-25
-25
BV
Fig. 4 Temperature Dependence
Fig. 2 Input Admittance
Fig. 6 Temperature Dependence of
2
CES
0
0
3
T
T
of Drain to Source Resistance
Breakdown and Threshold Voltage
25
25
J
J
V
4
I
- Degrees C
- Degrees C
D
T
GS
J
= 40A
= 25°C
50
50
- Volts
5
6
75
75
IXTH 50N20
IXTM 50N20
7
100 125 150
100 125 150
V
8
GS(th)
9
10
3 - 4