IXTP22N50PM IXYS, IXTP22N50PM Datasheet

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IXTP22N50PM

Manufacturer Part Number
IXTP22N50PM
Description
Manufacturer
IXYS
Datasheet

Specifications of IXTP22N50PM

Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
8.0
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
2880
Qg, Typ, (nc)
50
Trr, Typ, (ns)
400
Pd, (w)
43
Rthjc, Max, (k/w)
2.9
Package Style
TO-220 OVERMOLED
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
PolarHV
MOSFET
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
T
T
Transient
T
T
T
T
I
T
1.6 mm (0.062 in.) from Case for 10 s
Plastic Body for 10 s
Mounting Torque
V
V
V
V
V
Test Conditions
Continuous
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 25°C to 150°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
Power
DM
GS
, V
DSS
, I
D
, V
DD
D
D
= 250μA
= 250μA
= 11A, Note 1
≤ V
GS
DS
= 0V
= 0V
DSS
, T
J
GS
=150°C
= 1 MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTP22N50PM
500
Min.
3.0
Characteristic Values
- 55 ... +150
Maximum Ratings
- 55 ... +150
1.13/10
Typ.
± 30
± 40
150
300
260
500
500
750
2.5
50
22
10
43
8
Nm/lb.in.
Max.
±100 nA
270 mΩ
5.5
50 μA
5 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
V
I
R
OVERMOLDED
(IXTP...M) OUTLINE
G = Gate
S = Source
Features
Advantages
Applications
D25
Plastic Overmolded Tab for Electrical
Isolation
International Standard Package
Avalanche Rated
Fast Intrinsic Diode
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
G
D S
= 8A
= 500V
≤ ≤ ≤ ≤ ≤
D = Drain
270mΩ Ω Ω Ω Ω
DS100150A(07/09)

Related parts for IXTP22N50PM

IXTP22N50PM Summary of contents

Page 1

... DSS DS DSS 10V 11A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTP22N50PM Maximum Ratings 500 = 1 MΩ 500 GS ± 30 ± 750 =150° ... +150 150 - 55 ... +150 300 260 1 ...

Page 2

... I = 11A 16 DSS D 18 Characteristic Values Min. Typ. JM 400 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTP22N50PM ISOLATED TO-220 (IXTP...M) Max 2.90 °C/W Terminals Gate 2 - Drain (Collector Source (Emitter) Max ...

Page 3

... Value 125º 25º IXTP22N50PM Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V GS -50 - ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 125ºC J 25ºC - 40ºC 5.5 6.0 6.5 7 25ºC J 0.8 0.9 1.0 1.1 1.2 100.00 C iss 10.00 1.00 C oss 0.10 C rss 0. IXTP22N50PM Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 250V 11A D 8 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXTP22N50PM 1 10 IXYS REF: F_22N50P(63)7-22-09-B 100 ...

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