IXTU1N80P IXYS, IXTU1N80P Datasheet - Page 4

• Manufacturer Part Number: IXTU1N80P
• Manufacturer: IXYS

Specifications of IXTU1N80P

• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 1.0
• Rds(on), Max, Tj=25°c, (?): 14
• Ciss, Typ, (pf): 250
• Qg, Typ, (nc): 9.0
• Trr, Typ, (ns): 700
• Pd, (w): 42
• Rthjc, Max, (k/w): 3.0
• Package Style: TO-251

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1,000
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.40
2.5
0
0.45
f
= 1 MHz
3.0
5
Fig. 9. Forward Voltage Drop of
0.50
3.5
10
Fig. 7. Input Admittance
0.55
Fig. 11. Capacitance
T
J
= 125ºC
Intrinsic Diode
4.0
15
0.60
V
V
V
DS
GS
SD
T
0.65
4.5
20
- Volts
J
- Volts
- Volts
= 125ºC
- 40ºC
25ºC
0.70
5.0
25
0.75
5.5
30
0.80
C iss
C oss
C rss
T
J
= 25ºC
6.0
35
0.85
0.90
6.5
40
10.0
1.0
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
0.0001
9
8
7
6
5
4
3
2
1
0
0.0
0
V
I
I
D
G
DS
= 0.5A
= 1mA
1
Fig. 12. Maximum Transient Thermal
0.2
= 400V
0.001
2
Fig. 8. Transconductance
0.4
IXTA1N80P
IXTU1N80P
Fig. 10. Gate Charge
Pulse Width - Seconds
3
Q
G
0.01
I
Impedance
- NanoCoulombs
D
0.6
- Amperes
4
0.8
5
0.1
T
6
J
= - 40ºC
IXTP1N80P
IXTY1N80P
1.0
7
IXYS REF: T_1N80P(1A)02-10-09-A
1
25ºC
125ºC
1.2
8
1.4
10
9