IXTJ6N150 IXYS, IXTJ6N150 Datasheet - Page 3

• Manufacturer Part Number: IXTJ6N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTJ6N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 3
• Rds(on), Max, Tj=25°c, (?): 3.85
• Ciss, Typ, (pf): 2230
• Qg, Typ, (nc): 67
• Trr, Typ, (ns): 1500
• Pd, (w): 125
• Rthjc, Max, (k/w): 1.0
• Package Style: ISO TO-247

© 2012 IXYS CORPORATION, All Rights Reserved
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
0
0
V
GS
1
2
= 10V
5
Fig. 5. R
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
2
4
10
DS(on)
3
6
Normalized to I
15
Drain Current
4
I
D
V
V
8
DS
- Amperes
DS
20
- Volts
- Volts
5
10
T
6
25
V
J
V
D
GS
= 125ºC
GS
12
= 3A Value vs.
= 10V
= 10V
7V
6V
5V
7
T
J
7V
6V
5V
J
J
30
= 25ºC
= 125ºC
= 25ºC
14
8
35
16
9
18
40
10
3.5
2.5
1.5
0.5
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
10
3
2
1
0
9
8
7
6
5
4
3
2
1
0
-50
-50
0
V
Fig. 2. Extended Output Characteristics @ T
GS
-25
= 10V
-25
Fig. 4. R
5
Fig. 6. Maximum Drain Current vs.
0
0
DS(on)
10
Junction Temperature
T
T
Case Temperature
C
Normalized to I
25
J
25
- Degrees Centigrade
- Degrees Centigrade
15
V
DS
50
50
- Volts
20
75
V
IXTJ6N150
75
D
GS
= 3A Value vs.
I
= 10V
D
= 6A
25
100
100
7V
6V
5V
I
J
D
30
= 3A
= 25ºC
125
125
150
150
35