IXTT12N150 IXYS, IXTT12N150 Datasheet - Page 2

• Manufacturer Part Number: IXTT12N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTT12N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 2.0
• Ciss, Typ, (pf): 3720
• Qg, Typ, (nc): 106
• Trr, Typ, (ns): 1200
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: TO-268

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t
V
V
Resistive Switching Times
V
R
V
TO-247
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
Test Conditions
F
F
GS
R
DS
GS
G
GS
GS
= 6A, -di/dt = 100A/μs
= I
= 100V, V
= 2Ω (External)
= 20V, I
= 0V, V
= 10V, V
= 10V, V
= 0V
S
, V
ADVANCE TECHNICAL INFORMATION
GS
≤
= 0V, Note 1
DS
D
300μs, duty cycle, d
DS
DS
GS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
≤
5,049,961
5,063,307
5,187,117
2%.
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
8
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
3720
Typ.
240
106
0.21
Typ.
14.8
13
24.5
80
26
16
53
14
17
50
1.2
0.14 °C/W
Max.
Max.
6,404,065 B1
6,534,343
6,583,505
1.4
12
48
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
μs
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 Outline
TO-247 Outline
Terminals: 1 - Gate
Terminals: 1 - Gate
Dim.
6,727,585
6,771,478 B2 7,071,537
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
3 - Source
Millimeter
4.7
2.2
2.2
1.0
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
IXTH12N150
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
IXTT12N150
3
5.3
2.6
1.4
.8
e
2,4 - Drain
0.205 0.225
0.232 0.252
∅ P
2 - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216