IXTK20N150 IXYS, IXTK20N150 Datasheet - Page 4

• Manufacturer Part Number: IXTK20N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTK20N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 20
• Rds(on), Max, Tj=25°c, (?): 1.0
• Ciss, Typ, (pf): 7800
• Qg, Typ, (nc): 215
• Trr, Typ, (ns): 1100
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.10
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100
0.1
10
10
40
35
30
25
20
15
10
1
8
6
4
2
0
5
0
10
0
0
V
I
I
T
T
Single Pulse
R
D
G
J
C
DS
20
DS(on)
= 150ºC
= 10A
= 10mA
= 25ºC
= 750V
Fig. 11. Forward-Bias Safe Operating Area
Limit
5
40
60
Fig. 7. Transconductance
100
10
Fig. 9. Gate Charge
80
Q
G
@ T
- NanoCoulombs
I
V
D
100
DS
- Amperes
C
- Volts
15
= 25ºC
120
T
J
140
1,000
= - 40ºC
20
DC
25ºC
125ºC
160
100µs
1ms
10ms
100ms
180
25
200
10,000
220
30
100,000
10,000
1,000
100
100
0.1
10
60
50
40
30
20
10
10
1
0
0.3
10
0
R
T
T
Single Pulse
f
DS(on)
J
C
= 1 MHz
= 150ºC
= 75ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
5
0.4
Fig. 12. Forward-Bias Safe Operating Area
Limit
10
0.5
100
Fig. 10. Capacitance
15
V
@ T
0.6
SD
V
T
V
DS
J
- Volts
DS
= 125ºC
C
- Volts
20
- Volts
= 75ºC
0.7
25
1,000
DC
IXTK20N150
IXTX20N150
C oss
C iss
C rss
0.8
25µs
100µs
1ms
10ms
100ms
30
T
J
= 25ºC
0.9
35
10,000
1.0
40