IXFH20N50P3 IXYS, IXFH20N50P3 Datasheet - Page 4

• Manufacturer Part Number: IXFH20N50P3
• Description: Polar3 HiperFETS
• Manufacturer: IXYS

Specifications of IXFH20N50P3

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 20
• Rds(on), Max, Tj=25°c, (?): 0.300
• Ciss, Typ, (pf): 1800
• Qg, Typ, (nc): 36
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 380
• Rthjc, Max, (ºc/w): 0.36
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
20
18
16
14
12
10
60
50
40
30
20
10
10
1
8
6
4
2
0
0
3.0
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
5
3.5
0.5
10
4.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
15
T
J
T
4.5
= 125ºC
J
V
V
V
= 125ºC
GS
SD
DS
0.7
20
- Volts
- Volts
- Volts
5.0
0.8
25
25ºC
5.5
T
J
0.9
30
= 25ºC
C iss
C oss
C rss
- 40ºC
6.0
1.0
35
6.5
1.1
40
100
0.1
10
10
30
25
20
15
10
1
9
8
7
6
5
4
3
2
1
0
5
0
10
0
0
R
T
T
Single Pulse
V
I
I
DS(on)
J
C
D
G
DS
= 150ºC
2
= 25ºC
= 10A
= 10mA
5
= 250V
IXFQ20N50P3 IXFH20N50P3
IXFA20N50P3 IXFA20N50P3
Limit
Fig. 12. Forward-Bias Safe Operating Area
4
10
6
Fig. 8. Transconductance
Fig. 10. Gate Charge
8
15
Q
G
- NanoCoulombs
I
D
V
10
DS
- Amperes
100
20
- Volts
12
T
J
= - 40ºC
25
14
25ºC
125ºC
16
30
18
35
100µs
1ms
20
1,000
22
40