IXFP20N50P3 IXYS, IXFP20N50P3 Datasheet

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IXFP20N50P3

Manufacturer Part Number
IXFP20N50P3
Description
Polar3 HiperFETS
Manufacturer
IXYS
Datasheet

Specifications of IXFP20N50P3

Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
0.300
Ciss, Typ, (pf)
1800
Qg, Typ, (nc)
36
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
380
Rthjc, Max, (ºc/w)
0.36
Package Style
TO-220
Polar3
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
F
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
sold
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
TO-263
TO-220
TO-3P
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
Mounting Torque
TO-247
V
V
V
V
V
Test Conditions
I
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
HiperFET
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 1.5mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
TM
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
TO-263 AA (IXFA)
T
Advance Technical Information
J
= 125°C
JM
IXFQ20N50P3
IXFA20N50P3
IXFH20N50P3
IXFP20N50P3
G
S
10..65/2.2..14.6
D (Tab)
500
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
± 30
± 40
500
500
300
380
150
300
260
Typ.
2.5
3.0
5.5
6.0
20
40
16
35
±100
Max.
1.25 mA
Nm/lb.in.
300 mΩ
5.0
25
N/lb.
V/ns
mJ
μA
°C
°C
°C
°C
°C
nA
W
V
V
V
V
A
A
A
V
V
g
g
g
g
V
I
R
TO-220AB (IXFP)
TO-3P (IXFQ)
TO-247 (IXFH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Fast Intrinsic Rectifier
Avalanche Rated
Low R
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
G
D
G
DS(ON)
S
D
G
= 500V
= 20A
≤ ≤ ≤ ≤ ≤
D
S
and Q
S
Tab = Drain
D
300mΩ Ω Ω Ω Ω
G
D (Tab)
D (Tab)
D (Tab)
= Drain
DS100414(11/11)

Related parts for IXFP20N50P3

IXFP20N50P3 Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 TO-263 AA (IXFA (Tab) Maximum Ratings 500 = 1MΩ 500 GS ± 30 ± 300 ≤ 150°C 35 ...

Page 2

... The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. ...

Page 3

... V - Volts DS Fig Normalized to I DS(on) Drain Current 3 10V GS 3.4 3.0 2.6 2.2 1.8 1.4 1.0 0 Amperes D © 2011 IXYS CORPORATION, All Rights Reserved = 25º 10V 5. 125º 10V GS 7V 3.0 2.6 6V 2.2 1 ...

Page 4

... 0.3 0.4 0.5 0.6 0 Fig. 11. Capacitance 10,000 1,000 100 MHz IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC - 40ºC 5.0 5.5 6.0 6.5 - Volts T = 25ºC J 0.8 0.9 1.0 1.1 - Volts C iss C oss C rss Volts IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3 Fig. 8. Transconductance ...

Page 5

... IXYS CORPORATION, All Rights Reserved IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3 Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds 1 10 IXYS REF: F_20N50P3(W5) 11-14-11 ...

Page 6

... TO-263 Outline TO-220 Outline IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Dim. Millimeter Inches Min. Max. Min. A 4.06 4.83 .160 b 0.51 0.99 .020 b2 1.14 1.40 .045 c 0.40 0.74 .016 c2 1.14 1.40 .045 D 8.64 9.65 .340 D1 8.00 8.89 .280 E 9.65 10.41 .380 E1 6.22 8.13 .270 1. Gate e 2.54 BSC .100 2. Drain L 14.61 15.88 .575 3. Source L1 2.29 2.79 .090 4. Drain L2 1.02 1.40 .040 L3 1.27 1.78 .050 L4 0 0.13 Pins: ...

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