IXFQ24N50P2 IXYS, IXFQ24N50P2 Datasheet - Page 2

• Manufacturer Part Number: IXFQ24N50P2
• Description: Polar2 HiperFETS
• Manufacturer: IXYS

Specifications of IXFQ24N50P2

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 2890
• Qg, Typ, (nc): 48
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 480
• Rthjc, Max, (ºc/w): 0.26
• Package Style: TO-3P

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 12A, -di/dt = 100A/μs
= I
= 100V, V
= 10V, V
= 10Ω (External)
= 0V
= 20V, I
= 0V, V
= 10V, V
S
, V
GS
= 0V, Note 1
DS
D
DS
GS
DS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0V
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
14
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
2890
Typ.
0.25
0.69
280
10
24
30
22
15
48
13
16
5
9
0.26 °C/W
Max.
Max.
6,404,065 B1
6,534,343
6,583,505
200
1.3
24
96
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-3P (IXFQ) Outline
6,727,585
6,771,478 B2 7,071,537
IXFQ24N50P2
7,005,734 B2
7,063,975 B2
7,157,338B2