IXFK40N50Q2 IXYS, IXFK40N50Q2 Datasheet

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IXFK40N50Q2

Manufacturer Part Number
IXFK40N50Q2
Description
Q2-Class HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFK40N50Q2

Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
40
Rds(on), Max, Tj=25°c, (?)
0.16
Ciss, Typ, (pf)
4850
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
560
Rthjc, Max, (ºc/w)
0.22
Package Style
TO-264
HiPerFET
Power MOSFET
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Low intrinsic R
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
A
GSS
DSS
© 2008 IXYS CORPORATION, All rights reserved
J
L
DGR
GSS
GSM
AS
D
JM
stg
DSS
GS(th)
d
DS(on)
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.063 in) from case for 10s
Mounting torque
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
TM
g
, low t
DM
DSS
, V
GS
, I
DD
D
D
D
= 250μA
= 4mA
≤ V
rr
= 0.5 • I
DS
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
Preliminary Technical Information
J
= 125°C
g
JM
IXFK40N50Q2
-55 ... +150
-55 ... +150
Min.
500
Characteristic Values
3.0
Maximum Ratings
1.13/10
150
500
500
160
560
300
±30
±40
Typ.
2.5
10
40
40
20
±200
160
Nm/lb.in.
Max.
5.5
25
1 mA
V/ns
μA
nA
°C
°C
°C
°C
g
W
J
V
V
V
V
A
A
A
V
V
V
I
R
t
TO-264 (IXFK)
G = Gate
S = Source
Features
Applications
Advantages
D25
rr
resistance
Double metal process for low gate
International standard package
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Easy to mount
Space savings
High power density
DSS
DS(on)
G
D
S
≤ ≤ ≤ ≤ ≤
= 500V
= 40A
≤ ≤ ≤ ≤ ≤ 160mΩ Ω Ω Ω Ω
D
TAB = Drain
250ns
(TAB)
= Drain
DS100035(08/08)

Related parts for IXFK40N50Q2

IXFK40N50Q2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • Note 1 DS(on D25 © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFK40N50Q2 g Maximum Ratings 500 500 ±30 ±40 40 160 JM 40 2.5 20 560 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. 10 Characteristic Values Min. Typ. ...

Page 2

... Characteristic Values Min. Typ. Max. 160 A JM 1.5 250 100 5,049,961 5,237,481 6,162,665 6,404,065 B1 5,063,307 5,381,025 6,259,123 B1 6,534,343 5,187,117 5,486,715 6,306,728 B1 6,583,505 IXFK40N50Q2 TO-264 (IXFK) Outline °C μC A 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 ...

Page 3

... Value D25 125º 25º 100 -50 IXFK40N50Q2 Fig. 2. Extended Output Characteristics º 10V Volts D S Normalized to 0.5 I Value DS(on ) D25 vs. Junction Temperature V = 10V 40A ...

Page 4

... T = 25º 0.9 1.0 1.1 1.2 0 1000 C iss 100 C oss IXFK40N50Q2 Fig. 8. Transconductance 40ºC J 25ºC 125º Amperes D Fig. 10. Gate Charge V = 250V 20A 10m ...

Page 5

... Fig. 13. Maximum Transient Thermal Impedance 1.00 0.10 0.01 0.00 0.1 1 © 2008 IXYS CORPORATION, All rights reserved 10 100 Pulse Width - milliseconds IXFK40N50Q2 1000 10000 IXYS REF: F_40N50Q2 (84)5-28-08-C ...

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