IXFR64N50Q3 IXYS, IXFR64N50Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFR64N50Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFR64N50Q3

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 45
• Rds(on), Max, Tj=25°c, (?): 0.094
• Ciss, Typ, (pf): 6950
• Qg, Typ, (nc): 145
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: ISOPLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
200
180
160
140
120
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
10
0
0
0.3
4
0
f
= 1 MHz
4.5
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
5
0.5
10
5.5
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
6
15
0.7
T
T
J
J
V
V
V
= 125ºC
= 125ºC
6.5
DS
SD
GS
0.8
20
- Volts
- Volts
- Volts
7
25ºC
0.9
25
7.5
T
J
C iss
C oss
1.0
C rss
= 25ºC
- 40ºC
8
30
1.1
8.5
35
1.2
9
1.3
9.5
40
1000
100
10
1
16
14
12
10
80
70
60
50
40
30
20
10
8
6
4
2
0
10
0
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
10
= 25ºC
= 32A
= 10mA
Fig. 12. Forward-Bias Safe Operating Area
= 250V
R
DS(on)
20
50
Limit
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
Q
G
40
- NanoCoulombs
V
I
D
DS
- Amperes
100
100
- Volts
50
IXFR64N50Q3
60
70
T
150
J
= - 40ºC
125ºC
80
25ºC
25µs
100µs
1ms
90
1,000
100
200